Shot noise behaviour of subthreshold MOS transistors
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چکیده
2014 It is shown that assuming weak inversion, low drain current asymptotic value of the gate equivalent noise resistor is given by n2/2 UT/ID, corresponding to shot noise. Measurements confirming this theory as well as flicker noise measurements on n and p channel transistors integrated with either bulk or SOS CMOS silicon gate technology are presented. REVUE DE PHYSIQUE APPLIQUÉE TOME 13, DÉCEMBRE 1978,
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تاریخ انتشار 2016